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已研制成功摄象机用的光探测器。它是一种具有浅p-n结的光电二极管。在n~+-GaAs衬底上,汽相外延生长的n-GaAs_(1-x)P_x层里形成p-n结。通过控制组分,结深和施主浓度,已能批量生产反向偏置电压2V时,典型暗电流为0.2PA/mm~2,△EV小于0.085的光电二极管。△EV小于0.085的含意是指光电二极管的光谱响应非常接近人眼的光谱响应。此种二极管的可靠性高,其部分原因是由于它勿须红外截止滤波器。
Has developed a successful camera with a light detector. It is a photodiode with a shallow p-n junction. On the n ~ + -GaAs substrate, a p-n junction is formed in the vapor phase epitaxially grown n-GaAs_ (1-x) P_x layer. By controlling the composition, junction depth and donor concentration, it is possible to mass-produce photodiodes with a typical dark current of 0.2PA / mm ~ 2 and a ΔEV of less than 0.085 at a reverse bias voltage of 2V. The meaning of ΔEV less than 0.085 means that the spectral response of the photodiode is very close to the spectral response of the human eye. The high reliability of this diode, in part because it does not require infrared cut-off filter.