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A double insulation layer structure organic thin films transistor (OTFT) was investigated for improving the performance of the SiO2 gate insulator. A 50 nm PMMA layer was coated on top of the SiO2 gate insulator as the organic insulator layer. The results demonstrated that using inorganic/organic compound insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics and decreased leakage current. Electrical parameters of carrier mobility and on/off ratio were calculated. OTFT based on Si substrate with a field-effect mobility of 4.0 × 10-3cm2/Vs and on/off ratio of 104 was obtained.
A double insulation layer structure organic thin films transistor (OTFT) was investigated for improving the performance of the SiO2 gate insulator. A 50 nm PMMA layer was coated on top of the SiO2 gate insulator as the organic insulator layer. The results said that using inorganic / organic compound insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics and decreased leakage current. Electrical parameters of carrier mobility and on / off ratio were calculated. OTFT based on Si substrate with a field-effect mobility of 4.0 × 10 -3 cm 2 / Vs and on / off ratio of 104 was obtained.