基于背景电荷不敏感单电子晶体管/场效应晶体管混合存储单元利用单电子晶体管源漏电流随栅电压周期振荡的特性工作,以半经典的单电子正统理论为基础,采用计算机数值模拟的方法,分析了背景电荷不敏感单电子晶体管/常规场效应晶体管混合存储单元的工作原理和基本特性.提出了存储单元中分别以三结电容耦合单电子晶体管和单电子旋转栅替代双结单电子晶体管的新结构,其主要思想是通过增加单电子器件中的串联隧道结数来抑制各种噪声.模拟结果表明,新结构的系统性能,特别是抗噪声性能有一定提高 Based on the background charge insensitive single-electron transistor / field-effect transistor hybrid memory cell using single-electron transistor source and drain current oscillation with the gate cycle characteristics of the work to semi-classical single-electron orthodox theory as the basis, the use of computer numerical simulation method In the background, the working principle and basic characteristics of the charge-insensitive single-electron transistor / conventional field-effect transistor hybrid memory cell are proposed. New memory cells are replaced by triple junction capacitively coupled single electron transistors and single electron spin gates in place of double junction single electron transistors Structure, the main idea is to suppress all kinds of noise by increasing the number of tandem tunneling junctions in a single electronic device.The simulation results show that the system performance of the new structure, especially the anti-noise performance is improved