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从理论和实验上研究了分子束外延生长的PbTe/Pb_(0.88)Sn_(0.12)Te多量子阱结构材料中的持续光电导过程.认为材料中持续光电导的衰减是依赖于隧穿协助的电子-深中心复合过程.理论计算与实验结果一致.通过对持续光电导衰减规律的理论拟合,得到了PbTe/Pb_(0.88)Sn_(0.12)Te量子阱材料的导带不连续值及两类能谷间的能量差.
The photoconductivity in PbTe / Pb_ (0.88) Sn_ (0.12) Te MQW structure material grown by molecular beam epitaxy has been studied theoretically and experimentally. The degradation of sustained photoconductivity in the material is considered to be dependent on the tunneling assistance Electron-deep center composite process.The theoretical calculation is in good agreement with the experimental results.The discontinuity of the conduction band of PbTe / Pb_ (0.88) Sn_ (0.12) Te quantum well material and the two Energy class between the valley of poor.