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本文介绍生长碲镉汞(CMT)的一种新方法,它是通过有机金属气相外延(MOVPE)交替地生长出CdTe和HgTe薄层,并使之在生长温度下相互扩散而得到CMT。利用这种方法生长的外延层,纵向和横向都有良好的均匀性,并有反射的表面光洁度。对上好外延层作初步电学测量表明:其电学性质是受汞空位支配,而不是受杂质支配。
This article describes a new method for growing a cadmium telluride (CMT) by alternately growing thin layers of CdTe and HgTe by metal-organic vapor phase epitaxy (MOVPE) and diffusing them to each other at the growth temperature. Epitaxial layers grown by this method have good longitudinal and transverse uniformity with a reflective surface finish. Preliminary electrical measurements of the upper epitaxial layer show that its electrical properties are governed by mercury vacancies rather than by impurities.