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日本三菱公司最近成功地生产出耐受辐射能力极高的产品,在轨道上可工作十年,性能不下降,一般可达到卫星本身的寿命。普通的MOS结构的64k静态RAM由于在辐射影响下会发生自锁和软错误,故在上述同样的环境下仅能用一年。三菱公司搞的新型静态RAM的另一个特点是,集成度在至今所生产的人造卫星专用存贮器大规模集成电路,及超大规模集成电路中是最高的。早先,此类存贮器的最大容量为4k。这种新芯片获得如此高的抗辐射能力的关键之一,是使用改进了的单晶硅薄膜基片。另一个因素是将芯片在制造过程中所承受的温度下降至900℃,大约下降了100℃。
Japan’s Mitsubishi Corporation has recently succeeded in producing highly radiation-tolerant products that can orbit for 10 years without degrading performance and generally reaching the life of the satellite itself. The 64k static RAM of an ordinary MOS structure can only be used for one year in the same environment as described above due to self-locking and soft errors under the influence of radiation. Another feature of the new static RAM from Mitsubishi is that the integration level is the highest among the large-scale integrated circuits used in satellites dedicated to storage devices manufactured to date, and very large-scale integrated circuits. Earlier, this type of memory had a maximum capacity of 4k. One of the keys to achieving such a high radiation resistance of this new chip is the use of an improved monocrystalline silicon film substrate. Another factor is the temperature dropped during the manufacturing process to 900 ° C, a drop of about 100 ° C.