分子离子注入半导体材料是一个有效的降低杂质原子能量,快速行成非晶层的有效方法。用BF_2~+分子离子注入硅中形成的浅结器件可能较B~+原子离子注入更为有益。测定和研究BF_2~+分子离子注入硅后硼原子的深度分布,并与B~+原子离子注入的深度 Molecular ion implantation of semiconductor materials is an effective method to reduce the energy of impurity atoms and rapidly form an amorphous layer. The formation of shallow junction devices with BF_2 ~ + ions into the silicon may be more beneficial than the B ~ + atom ion implantation. The depth distribution of boron atoms after BF_2 ~ + ion implantation was measured and studied,