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基体温度、反应压力和碳源浓度等沉积参数决定热丝化学气相沉积金刚石薄膜的性能。运用正交试验方法,研究参数对硬质合金基体金刚石薄膜生长的综合作用。采用场发射扫描电镜(FE-SEM)、原子力显微镜(AFM)和拉曼(Raman)光谱检测薄膜的形貌结构、生长速率和成分。结果表明:随着基体温度的降低,金刚石形貌从锥形结构向团簇状结构转变;低反应压力有利于纳米金刚石薄膜的生成;生长速率受反应压力和碳源浓度综合作用的影响。
The deposition parameters such as substrate temperature, reaction pressure and carbon source concentration determine the performance of hot filament CVD diamond films. Orthogonal experiment method was used to study the effect of parameters on the growth of diamond film of cemented carbide substrate. The morphology, growth rate and composition of the films were characterized by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and Raman spectroscopy. The results show that diamond morphology changes from conical structure to cluster structure with the decrease of substrate temperature. The low reaction pressure is conducive to the formation of nanocrystalline diamond thin films. The growth rate is affected by the combined effect of reaction pressure and carbon source concentration.