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利用LASTIP软件理论分析了有源区量子阱数目对不同组分的In Ga As Sb/Al Ga As Sb 2μm半导体激光器能带、电子与空穴浓度分布以及辐射复合率等性能参数的影响。研究表明:量子阱的个数是影响激光器件性能的关键参数,需要综合分析和优化。量子阱数太少时,量子阱对电子束缚能力弱,电子在p层中泄漏明显,辐射复合率低。量子阱数过多时,载流子在阱内分配不均匀,p型层中电子浓度升高,器件内损耗加大,辐射复合率下降。结合对外延材料质量的分析,In Ga As Sb/Al Ga As Sb半导体激光器有源区最优量子阱数目为2~3。该研究结果可合理地解释已有实验报道,并为2μm半导体激光器结构设计提供理论依据。
The influence of the number of quantum wells in the active region on the energy bands, electron and hole concentration distributions and radiation recombination rates of In Ga As Sb / Al Ga As Sb 2μm semiconductor lasers with different compositions was analyzed by LASTIP software. The research shows that the number of quantum wells is a key parameter that affects the performance of laser devices and needs comprehensive analysis and optimization. When the number of quantum wells is too small, the electron trap of the quantum well is weak, and the electron leaks obviously in the p layer and the radiation recombination rate is low. When the number of quantum wells is too large, carriers are unevenly distributed in the well, the electron concentration in the p-type layer increases, the loss in the device increases, and the radiation recombination rate decreases. Combined with the analysis of epitaxial material quality, the optimal number of quantum wells in the active region of In Ga As Sb / Al Ga As Sb semiconductor lasers is 2 ~ 3. The results of this study can reasonably explain the existing experimental reports and provide a theoretical basis for the structural design of a 2 μm semiconductor laser.