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采用热压烧结法制备了Al掺杂的Ti_3SiC_2陶瓷,通过X射线衍射仪、扫描电子显微镜、能谱仪、矢量网络分析仪等,分别对所制备的样品进行了表征和抗氧化性能、微波介电性能测试。结果表明:所制备的Al掺杂陶瓷具有相当高的Ti_3SiC_2质量分数,陶瓷晶粒呈现明显的层状特征。相比于未掺杂样品,通过Al掺杂途径,可显著提高Ti_3SiC_2陶瓷1200℃高温下的抗氧化性能,并使Ti_3SiC_2陶瓷的介电常数实部ε’和虚部ε“值大幅度增加,其在8.2~12.4 GHz频率范围的均值分别为60.8和6.28。
The Al-doped Ti_3SiC_2 ceramics were prepared by hot-pressing sintering method. The prepared samples were characterized and characterized by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and vector network analyzer, respectively. Electrical performance test. The results show that the prepared Al-doped ceramics have a relatively high Ti 3 SiC 2 mass fraction and the ceramic grains show obvious layered features. Compared with the undoped samples, the oxidation resistance of Ti 3 SiC 2 ceramics at 1200 ℃ can be significantly enhanced through the Al doping route, and the real part ε ’and the imaginary part ε ”of Ti 3 SiC 2 ceramics increase significantly , With mean values of 60.8 and 6.28 for the frequency range 8.2 to 12.4 GHz, respectively.