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利用分子束外延技术和Stranski_Krastanow生长模式 ,系统研究了In(Ga)As GaAs,InAlAs AlGaAs GaAs,In(Ga)As InAlAs InP材料体系应变自组装量子点的形成和演化 .通过调节实验条件 ,可以对量子点的空间排列及有序性进行控制 ,并实现了InP衬底上量子点向量子线的渡越 .研制出激射波长λ =96 0nm ,条宽 1 0 0 μm ,腔长 80 0 μm的InAs GaAs量子点激光器 ,室温连续输出功率大于 1W ,室温阈值电流密度 2 1 8A cm2 ,0 .5 3W室温连续工作寿命超过 30 0 0h .
The formation and evolution of strain self-assembled quantum dots of In (Ga) As GaAs, InAlAs AlGaAs GaAs, In (Ga) As InAlAs InP materials were systematically investigated by molecular beam epitaxy and Stranski_Krastanow growth model. By adjusting the experimental conditions, The quantum dots are arranged and ordered in a controlled manner, and the transition of the quantum dot vectors on the InP substrate is realized. The lasing wavelength λ = 96 0nm, the width of 100 μm, the cavity length of 80 μm Of InAs GaAs quantum dot laser, continuous output power at room temperature greater than 1W, room temperature threshold current density of 2 1 8A cm2, 0. 5 3W continuous service life of more than 30h 0h.