论文部分内容阅读
ZnO作为一种宽带隙直接跃迁半导体材料,具有优良的闪烁性能,在掺杂Ga、In等元素后具有潜在的高光输出性能,成为用于D-T中子发生器中α粒子探测的首选闪烁材料。本文主要分析了ZnO基闪烁材料的研究现状以及ZnO基闪烁材料中存在的问题,并针对目前存在的问题提出了解决的思路。
As a kind of wide bandgap direct transition semiconductor material, ZnO has excellent scintillation property and possesses potential high light output after doping Ga, In and other elements, making it the first choice of scintillation material for detecting α particles in D-T neutron generators. This paper mainly analyzes the research status of ZnO-based scintillation materials and the problems existing in ZnO-based scintillation materials, and puts forward some solutions to the existing problems.