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利用X射线衍射(XRD)研究中子辐照6H-SiC晶体的退火特性,发现辐照后晶体的XRD峰的半高宽(full width at half maximum,FWHM)增大,之后又随退火温度的升高,在700～1 230℃范围内呈线性规律的回复。以此规律为依据,可发展一种适合测量高温和复杂温度场温度的测温方法。采用添加了K2CO3的KOH为腐蚀剂,对辐照前、辐照后及辐照后退火的掺氮6H-SiC单晶进行位错腐蚀观察,发现经中子辐照的晶体中位错面积比随退火温度的变化趋势与FWHM随退火温度的变化趋势基本一致,由此认为经中子辐照所产生的位错可能是导致XRD峰的FWHM变化的一个重要因素。
The X-ray diffraction (XRD) study of the annealed properties of the neutron irradiated 6H-SiC crystal shows that the full width at half maximum (FWHM) of the XRD peak of the irradiated crystal increases, and then increases with the annealing temperature Rise, in the range of 700 ~ 1 230 ℃ showed a linear response. Based on this law, a temperature measurement method suitable for measuring temperature in high and complex temperatures can be developed. KOH doped with K 2 CO 3 as an etchant was used to investigate the dislocation corrosion of nitrogen-doped 6H-SiC single crystals annealed before, during and after irradiation. It was found that the dislocation area ratio of the neutron-irradiated crystals The change trend of annealing temperature and FWHM are basically the same with the annealing temperature, so that the dislocations generated by neutron irradiation may be an important factor leading to the change of FWHM of XRD peak.