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利用深能级瞬态谱(DLTS)研究了气源分子束外延(GSMBE)生长的InP1-xBix材料中深能级中心的性质。在未有意掺杂的InP中测量到一个多数载流子深能级中心E1,E1的能级位置为Ec-0.38 e V,俘获截面为1.87×10~(-15)cm~2。在未有意掺杂的InP0.9751Bi0.0249中测量到一个少数载流子深能级中心H1,H1的能级位置为Ev+0.31 eV,俘获截面为2.87×10~(-17)cm~2。深中心E1应该起源于本征反位缺陷PIn,深中心H1可能来源于形成的Bi原子对或者更复杂的与Bi相关的团簇。明确这些缺陷的起源对于InPBi材料在器件应用方面具有重要的意义。
The properties of deep level centers in InP1-xBix materials grown by gas-source molecular beam epitaxy (GSMBE) were studied using deep level transient spectroscopy (DLTS). In the unintentionally doped InP, the energy level position E1, E1 of a majority carrier deep level center was measured to be Ec-0.38 eV with a capture cross section of 1.87 × 10 ~ (-15) cm ~ 2. In In0.9751Bi0.0249, which is not intentionally doped, the energy level position of a minority carrier deep level center H1, H1 is measured as Ev + 0.31 eV and the capture cross section is 2.87 × 10 ~ (-17) cm ~ 2 . The deep center E1 should originate from the intrinsic anti-localization defect PIn. The deep center H1 may originate from the formed pairs of Bi atoms or the more complex Bi-related clusters. Clarifying the origin of these defects is of great importance to the device application of InPBi materials.