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建立了包含“自热效应”的A lG aN/G aN HEM T(高电子迁移率晶体管)直流I-V特性解析模型。从理论的角度分析了自热效应对A lG aN/G aN HEM T器件的影响,并同已有的实验结果进行了对比,符合较好。证明基于这种模型的理论分析适于A lG aN/G aN HEM T器件测试及应用的实际情况。
The analytical model of DC I-V characteristic of AlG aN / G aN HEM T (High Electron Mobility Transistor) including self-heating effect was established. The effect of self-heating on the AlGaN / G aN HEM T devices is analyzed from a theoretical point of view and compared with the existing experimental results, which is in good agreement. It is proved that the theoretical analysis based on this model is suitable for the actual situation of testing and application of ALG aN / G aN HEM T devices.