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介绍了一种基于MEMS技术的新型室温中远红外波段硅基电容式红外探测器原理和制作工艺过程,并详细介绍了针对单面光刻机而采用的对准孔双面对准和键合对准技术、浓硼扩散EPW腐蚀停止技术制备超薄敏感硅膜以及薄膜的疏水处理等关键工艺。还对各环节所遇到的问题和其相应的解决方法进行了详细地阐述。
This paper introduces a new type of room temperature mid-infrared infrared band silicon-based capacitive infrared detector based on MEMS technology and its manufacturing process. The alignment holes and alignment pairs Quasi-technology, concentrated boron diffusion EPW etching technology to stop the preparation of ultra-thin sensitive silicon membrane and hydrophobic membrane treatment and other key processes. Also discussed in various aspects of the problems encountered and their corresponding solutions are described in detail.