【摘 要】
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In this paper, two types of silicon (Si) particles ball-milled from n-type Si wafers, respectively, with resistivity values of 1 ?·cm and 0.001 ?·cm are depos
【机 构】
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Institute of Photovoltaics, Nanchang University, Nanchang 330031, China
论文部分内容阅读
In this paper, two types of silicon (Si) particles ball-milled from n-type Si wafers, respectively, with resistivity values of 1 ?·cm and 0.001 ?·cm are deposited with silver (Ag). The Ag-deposited n-type 1-?·cm Si particles (n1-Ag) and Ag-deposited n-type 0.001-?·cm Si particles (n0.001-Ag) are separately used as an anode material to assemble coin cells, of which the electrochemical performances are investigated. For the matching of work function between n-type 1-?·cm Si (n1) and Ag, n1-Ag shows discharge specific capacity of up to 683 mAh·g?1 at a current density of 8.4 A·g?1, which is 40％higher than that of n0.001-Ag. Furthermore, the resistivity of n1-Ag is lower than half that of n0.001-Ag. Due to the mismatch of work function between n-type 0.001-?·cm Si (n0.001) and Ag, the discharge specific capacity of n0.001-Ag is 250.2 mAh·g?1 lower than that of n1-Ag after 100 cycles.
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