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对磁控射频溅射法制备的Ag5 In5 Te47Sb3 3 相变薄膜热致晶化的微观结构和光学性质的变化进行了研究 .沉积态薄膜为非晶态 ,其晶化温度为 1 6 0℃ .晶态薄膜中产生了立方晶态相AgInTe2 和AgSbTe2 及单质Sb ,2 2 0℃退火薄膜中AgSbTe2 相含量最大 .晶态薄膜的反射率高于沉积态 ,并且 2 2 0℃退火的晶态薄膜反射率最大 .2 2 0℃退火薄膜为直径约 30nm的球状AgSbTe2 相和短棒状Sb相 .
The microstructure and optical properties of the Ag5 In5 Te47Sb3 3 phase-change thin film prepared by magnetron RF sputtering were investigated. The as-deposited films were amorphous and their crystallization temperature was 160 ℃. In the crystalline films, the cubic crystalline phases AgInTe2 and AgSbTe2 and elemental Sb were produced, and the AgSbTe2 phase was the largest in the annealed films at 220 ℃ .The reflectivity of the crystalline films was higher than that of the as-deposited films and the crystalline films annealed at 220 ℃ The reflectivity is the largest.22 ° C annealed film is about 30nm in diameter spherical AgSbTe2 phase and short rod Sb phase.