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在溶胶-凝胶的前驱体中加入高聚物聚乙烯吡咯烷酮(PVP-K30),可以在烧结温度600℃成功制备沉积在Pt/Ti/SiO_2/Si基片上多层结构的Pb(Zr_(0.52)Ti_(0.48))O_3-Ni_(0.5)Zn_(0.5)Fe_2O_4(PZT-NZFO)纳米复合薄膜。采用X-ray衍射仪测定纳米薄膜的相结构,扫描电镜与原子力显微镜观察纳米复合薄膜的表面形貌。相结构分析表明:铁电相与铁磁相共存在PZT-NZFO纳米复合薄膜中;微观形貌表明:表面微观形貌致密,无裂纹;此外,PZT-NZFO中PZT层与NZFO层相互交替,并且层与层之间的厚度可以得到较好地控制。PZT-NZFO纳米复合薄膜呈现明显的电滞回线与磁滞回线,进一步证明了PZT-NZFO复合纳米薄膜中同时存在着铁电相与铁磁相。介电性能显示:室温在1kHz,相对介电常数和介电损耗分别为165和0.02。磁性能结果显示:室温时,PZT-NZFO纳米复合薄膜的饱和磁化强度为2.6×10~4 A/m,内在矫顽力为1.19×10~4 A/m。加入高聚物后改进的溶胶-凝胶制备的PZT-NZFO复合纳米薄膜实验结果表明,这种致密的、无裂纹的、介电损耗低,并同时具有铁电与磁电的纳米复合薄膜在微型器件与集成电路中具有潜在的应用。
Polyvinyl pyrrolidone (PVP-K30) was added into the precursor of sol-gel to successfully prepare Pb (Zr 0.52 ) Ti_ (0.48)) O_3-Ni_ (0.5) Zn_ (0.5) Fe_2O_4 (PZT-NZFO) nanocomposite films. The phase structure of nanofilms was determined by X-ray diffractometer. The surface morphology of nanocomposite films was observed by scanning electron microscopy and atomic force microscopy. The phase structure analysis shows that the ferroelectric phase coexists with the ferromagnetic phase in the PZT-NZFO nanocomposite film. The microstructure shows that the microstructure is dense and crack-free. In addition, the PZT layer and the NZFO layer in PZT-NZFO alternate with each other, And the thickness between layers can be better controlled. PZT-NZFO nanocomposite films showed obvious hysteresis loops and hysteresis loops, which further proves that the ferroelectric and ferromagnetic phases are present in the PZT-NZFO composite nanofilms. Dielectric properties show: at room temperature at 1kHz, relative dielectric constant and dielectric loss of 165 and 0.02, respectively. The results of magnetic properties show that the saturation magnetization of PZT-NZFO nanocomposite films is 2.6 × 10 ~ 4 A / m and the intrinsic coercivity is 1.19 × 10 ~ 4 A / m at room temperature. The experimental results of PZT-NZFO nanocomposite films prepared by sol-gel method after adding polymer show that the compact, crack-free, low dielectric loss nanocomposite films with ferroelectric and magnetoelectric Micro Devices and Integrated Circuits have Potential Applications.