稀土元素不完全充满的4f电子壳层被它外部的5p和6s电子壳层有效地屏蔽.这一独特的电子结构使得稀土掺杂半导体材料中4f电子-声子耦合被减弱,因而稀土的发光具有锐利,热稳定性好等优点.近几年国际上已有很多关于用离子注入技术实现稀土掺杂的报道.离子注入具有掺杂浓度高,掺杂分布易于控制,可重复性好和操作简便等优点.但在 The 4f electron shell with incompletely filled REE is effectively shielded by the 5p and 6s electron shells outside it. This unique electronic structure weakens the 4f electron-phonon coupling in rare earth-doped semiconductor materials, and the luminescence of rare earth Has the advantages of sharpness, good thermal stability, etc. In recent years, there are many reports on rare earth doping using ion implantation technology in the world. Ion implantation has the advantages of high doping concentration, easy control of doping distribution, good repeatability and operation Simple and so on. But in