采用片状氮化硼扩散源提高TTL电路质量

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硅固态平面扩散源是七十年代出现的一种新的扩散技术,由于它具有均匀的扩散浓度,好的重复性和大大提高劳动生产率的优点,特别是随着硅片直径的增大、浅结扩散的采用促使氮化硼平面源的应用得到推广。我厂自76年年底开始采用片状氮化硼后使TTL电路的质量得到了一定程度的提高,最近四机部在上海召开了片状氮化硼扩散源经验交流会,使氮化硼的应用又取得了进展。 Silicon solid-state planar diffusive source is a new diffusion technology that appeared in seventies. It has the advantages of uniform diffusion concentration, good repeatability and greatly improved labor productivity. Especially with the increase of silicon wafer diameter, shallow The application of junction diffusion has promoted the application of boron nitride planar source. Since the beginning of the year 76, our factory has made the quality of TTL circuit improved to a certain extent by the use of flake boron nitride. Recently, the four-machine department convened an experience exchange meeting of flake boron nitride diffusion source in Shanghai to make boron nitride Application has made progress.
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