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本文首次利用ＧａＡｓ光电导开关，控制Ｎｄ：ＹＬＦ激光器腔内的Ｑ值，实现自锁模．稳态自锁脉冲序列长５０μｓ，单脉冲脉宽为１０ｐｓ，能量为０．１μＪ．
In this paper, the GaAs photoconductive switch is used for the first time to control the Q value in the cavity of Nd: YLF laser to realize self-locking mode. The steady-state self-locking pulse sequence is 50 μs long with a single pulse pulse width of 10 ps and an energy of 0.1 μJ.