报道了Ｃ波段单片矢量调制器的设计和制作。采用双栅场效应晶体管（ＤＧＦＥＴ）放大器作为控制器。偏置电路在芯片内。采用集总薄膜电容、电感、电阻作为匹配元件。采用离子注入、背面通孔接地、空气桥跨接等先进工艺技术。描述了ＤＧＦＥＴ器件Ｓ参数的提取步骤。两路放大器和９０°相移网络制作在３．１５ｍｍ×２．５ｍｍ×０．１ｍｍ的芯片上，同相功分器制作在１．６（１．８）ｍｍ×２．９ｍｍ×０．１ｍｍ的芯片上。电路可获得在０～８７°内连续变化的相移量，输出幅度可控。 Reported the design and manufacture of C-band monolithic vector modulator. Double gate field effect transistor (DGFET) amplifier is used as the controller. Bias circuit in the chip. Using lumped film capacitors, inductors, resistors as matching components. Using ion implantation, the back of the ground through the hole, air bridge bridging and other advanced technology. Describes the extraction procedure for S parameters of DGFET devices. The two-way amplifier and the 90 ° phase-shift network are fabricated on 3.15 mm × 2.5 mm × 0.1 mm chips. The in-phase splitters are fabricated on a 1.6 (1.8) mm × 2.9 mm × 0.1 mm Chip. Circuit can be obtained in the 0 ~ 87 ° continuous changes in the amount of phase shift, the output amplitude controllable.