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报道了封装大芯片InGaN/GaN蓝光发光二极管 (LED)的实验结果。在室温下 ,正向电压为 3.3V和电流为 35 0mA时 ,其轴向亮度为 16× 10 4 cd/m2 ,可视角为 98°。
The experimental results of encapsulating large chip InGaN / GaN blue light emitting diode (LED) are reported. At room temperature, the forward voltage is 3.3V and the current is 35 0mA, the axial brightness of 16 × 10 4 cd / m2, the viewing angle of 98 °.