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本文首次对具有p-InGaAs肖特基势垒增强层的p-InGaAs/n-InGaAs MSM光电探测器做了较系统研究。实验结果表明:具有20nm厚增强层器件的暗电流为3.5×10(-11)A(5伏,30×40μm~2);而具有40nm厚增强层器件的FWHMM为350ps(6伏)。
For the first time, a systematic study of p-InGaAs / n-InGaAs MSM photodetectors with p-InGaAs Schottky barrier enhancement layers has been done. The experimental results show that the dark current with a 20nm thick enhancement device is 3.5 × 10 (-11) A (5V, 30 × 40μm ~ 2), while the FWHMM with a 40nm thick enhancement device is 350ps (6V).