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用不同能量密度的激光脉冲照射布里奇曼法生长的块状p型的Hg_(1-x)Cd_xTe(x=0.16)单晶。应用能产生0.53μm波长的10ns脉冲(倍频)和能量密度可变(2～50mJ/cm~2)的脉冲激光器(Nd:YAG),在77～300K温度范围内,对原生的及激光照射的单晶样品,用范德堡法进行直流电导率及霍耳系数测量,还在室温下对样品进行X射线衍射图样及透射测量。电学研究表明,p型碲镉汞在激光照射后变成了n型;光学研究结构表明,激光照射后,自由载流子浓度陡增,透射微乎其微;X射线研究表明,p型单晶样品受激光照射后,结构也发生了变化,在晶格中引入了CdTe、Hg和Te相。
The bulk p-type Hg_ (1-x) Cd_xTe (x = 0.16) single crystal grown by the Bridgman method was irradiated with laser pulses of different energy density. By using pulsed lasers (Nd: YAG) that can generate 0.53μm wavelength and pulsed laser (Nd: YAG) with variable energy density (2-50mJ / cm ~ 2) at the temperature of 77 ~ 300K, Of single crystal samples were measured for DC conductivity and Hall coefficient by the method of Vanderbilt, and samples were also subjected to X-ray diffraction pattern and transmission measurement at room temperature. Electrical studies show that the p-type HgCdTe becomes n-type after laser irradiation. The optical structure shows that after laser irradiation, the free carrier concentration increases sharply and the transmission is negligible. X-ray studies show that the p-type single crystal samples are affected by After laser irradiation, the structure also changed, and CdTe, Hg and Te phases were introduced into the crystal lattice.