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采用微波等离子体技术在CH4-H2-C2H6气体条件下制备了钛基掺硼金刚石薄膜。四点探针法测得薄膜电阻率在零掺杂时为1×1012Ω·cm,当反应气源中B/C上升为5×10-3时电阻率降至5×10-3Ω·cm。扫描电镜显示掺硼金刚石具有完整晶型和致密结构。拉曼光谱观察到金刚石结构在掺杂前后发生明显改变。采用循环伏安测试了Ti/BDD电极的电化学参量,并与PbO2,Sn-Sb and PbO2-Er三种电极进行阳极氧化对-硝基酚的对比实验。结果表明,在Ti/BDD电极上,对-硝基酚的总有机碳去除率接近100%,远高于其它三种电极。
Titanium-based boron-doped diamond films were prepared by microwave plasma in CH4-H2-C2H6 gas. The resistivity of the thin film measured by the four-point probe method is 1 × 10 12 Ω · cm at zero doping and decreased to 5 × 10 -3 Ω · cm when the B / C of the reactant gas source is increased to 5 × 10 -3. Scanning electron microscopy showed that boron-doped diamond has a complete crystal structure and compact structure. Raman spectroscopy observed a significant change in the diamond structure before and after doping. The electrochemical parameters of Ti / BDD electrode were tested by cyclic voltammetry. The comparison of anodic oxidation of p-nitrophenol with PbO2, Sn-Sb and PbO2-Er was carried out. The results showed that the total organic carbon removal rate of p-nitrophenol at Ti / BDD electrode was close to 100%, much higher than the other three electrodes.