论文部分内容阅读
从半导体激光器产生的热量在热沉中的扩散入手 ,对列阵单元器件间的热相互作用进行了分析 ,提出了该过程是通过热流的扩散而发生作用的观点。通过这一分析获得了确定列阵器件中单元器件间距的理论依据。对二维列阵中上、下层器件的热相互影响以及脉冲工作的占空比进行了讨论 ,并将结果应用到 1.55μm半导体激光列阵器件中。采用漏光波导结构的单元器件 ,实现了二维 2× 2 ,2× 4两种列阵 ,其脉冲输出峰值功率分别达到 7W和 11W。
Starting from the diffusion of heat generated by the semiconductor laser in the heat sink, the thermal interactions among the elements of the array are analyzed, and the viewpoint that the process works through the diffusion of the heat flow is proposed. Through this analysis, the theoretical basis for determining the device component spacing in array devices is obtained. The thermal interaction between the upper and lower devices in the two-dimensional array and the duty cycle of the pulse operation are discussed. The results are applied to 1.55μm semiconductor laser array devices. The light-emitting waveguide structure of the unit device to achieve a two-dimensional 2 × 2, 2 × 4 two arrays, the pulse output peak power of 7W and 11W respectively.