Time optimal quantum control of two-qubit systems

来源 :中国科学:物理学、力学、天文学英文版 | 被引量 : 0次 | 上传用户:songyuyue
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
We study the optimal quantum control of heteronuclear two-qubit systems described by a Hamiltonian containing both nonlocal internal drift and local control terms.We derive an explicit formula to compute the minimum time required to steer the system from
其他文献
有一个大 thermo 眼的系数和一个宽线性悦耳的温度范围的新有点器官无机的混合 HfO2/SiO2 大音阶的第五音胶化材料为一个长时期波导栅栏(LPWG ) 的制造被开发了过滤器,其参数
In this paper,a high-resolution,hybrid compact-WENO scheme is developed based on the minimized dispersion and controllable dissipation reconstruction technique.
有 ITO/N, N 二度(1-naphthyl )-N,N-diphenyl,1,1-biphenyl-4,4-diamine (NPB )/tris (8-hydroquinolinato ) 铝(Alq3 )/2,9-dimethyl-4,7-diphenyl-l, 10-phenanthroline (BC
The effect of electrostatic force on the dynamic response of a Bernoulli-Euler piezoelectric nanobeam is analyzed in this paper.The governing equations with the
We introduce an algorithm to solve the block-edge problem taking advantage of the two diferent sky splitting functions:HTM and HEALPix.We make the cross-match w
由 microstructured 粘合剂表面的最近的 biomimic 设计激发了,我们学习在一个终止电影的纤丝状的数组和僵硬底层之间的粘附。使用一个二维的模型并且忽略纤维和退出的层的变
This paper investigates the convergence proof of the Direct Simulation Monte Carlo(DSMC) method and the Gas-Kinetic Unified Algorithm in simulating the Boltzman
在这份报纸,我们系统地高在 AlGaN/GaN metal-oxide-semiconductor 学习积极的门漏水流有用原子层免职(ALD ) 的 HfO2 电介质的电子活动性晶体管(MOS-HEMTs ) 。我们观察到合
The directional, averaged, and density-of-states effective masses of holes have been calculated for strained Si/(111)Si1-xGex. The results for the directional e