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在经NH3 等离子体氮化的Si(10 0 )衬底上 ,用等离子体增强化学气相淀积 (PECVD)的方法生长了ZnO缓冲层 ,经X射线衍射 (XRD)测量 ,得到了单一取向的ZnO(0 0 0 2 )膜。在此ZnO缓冲层上利用低压金属有机化学气相淀积 (LP MOCVD)方法生长了较高质量的ZnCdSe/ZnSe量子阱。通过不同阱宽的ZnCdSe/ZnSe量子阱生长和测量 ,得到了多级共振拉曼峰。从发光谱中可见 ,在 5 2 0nm附近有很强的发光 ,而在未覆盖ZnO的Si衬底上直接生长的ZnCdSe/ZnSe量子阱结构 ,其光致发光 (PL)谱未见发光。可见 ,在氮化的Si衬底上覆盖ZnO膜生长的ZnCdSe/ZnSe量子阱质量较好 ,是一种在Si衬底上生长Ⅱ Ⅵ族化合物半导体材料的有效方法
The ZnO buffer layer was grown by plasma enhanced chemical vapor deposition (PECVD) on a Si (100) substrate nitrided by NH3 plasma and was characterized by X-ray diffraction (XRD) ZnO (0 0 0 2) film. A higher quality ZnCdSe / ZnSe quantum well was grown on this ZnO buffer by low pressure metal-organic chemical vapor deposition (LPMOCVD). The growth and measurement of ZnCdSe / ZnSe quantum wells with different well widths give multi-level resonant Raman peaks. From the luminescence spectrum, there is a strong luminescence near 5200nm, while the ZnCdSe / ZnSe quantum well structure grown directly on the ZnO-uncovered Si substrate shows no luminescence in the photoluminescence (PL) spectrum. It can be seen that the ZnCdSe / ZnSe quantum well grown on a nitrided Si substrate with a ZnO film grows well and is an effective method for growing a II-VI compound semiconductor material on a Si substrate