【摘 要】
：
A series of diamonds with boron and sulfur co-doping were synthesized in the FeNiMnCo-C system by temperature gradient growth (TGG) under high pressure and high
【机 构】
：
School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China“,”S
论文部分内容阅读
A series of diamonds with boron and sulfur co-doping were synthesized in the FeNiMnCo-C system by temperature gradient growth (TGG) under high pressure and high temperature (HPHT).Because of differences in additives,the resulting diamond crystals were colorless,blue-black,or yellow.Their morphologies were slab,tower,or minaret-like.Analysis of the x-ray photoelectron spectra (XPS) of these diamonds shows the presence of B,S,and N in samples from which N was not eliminated.But only the B dopant was assuredly incorporated in the samples from which N was eliminated.Resistivity and Hall mobility were 8.510 Ω·cm and 760.870 cm2/V·s,respectively,for a P-type diamond sample from which nitrogen was eliminated.Correspondingly,resistivity and Hall mobility were 4.211 × 105 Ω·cm and 76.300 cm2/V·s for an N-type diamond sample from which nitrogen was not eliminated.Large N-type diamonds of type Ib with B-S doping were acquired.
其他文献
Grating-based x-ray phase contrast imaging has the potential to be applied in future medical applications as it is compatible with both laboratory and synchrotr
Density functional calculations have been performed to investigate the adsorption of twenty two different kinds of metal adatoms on graphene-like BC3.In contras
We have carried out high-resolution angle-resolved photoemission measurements on the Ce-based heavy fermion compound CePt2In7 that exhibits stronger two-dimensi
In this paper,by referring to the concept of coupled memristors (MRs) and considering the flux coupling connection,the constitutive relations for describing the
A Ge/Si heterojunction L-shaped tunnel field-effect transistor combined with hetero-gate-dielectric (GHL-TFET) is proposed and investigated by TCAD simulation.
This paper concentrates on the impact of SiN passivation layer deposited by plasma-enhanced chemical vapor deposition(PECVD)on the Schottky characteristics in G
本文以有蜡粉的法45抗热大白菜雄性不育系和甲型“两用系”为不育源，采用有性杂交的方法，向无蜡粉油青49菜心转育核雄性不育基因。对核雄性不育基因转育规律、不同细胞质材料回
辽宁美术出版社继1985年出版《目击世界——世界新闻摄影比赛作品选》首集之后,1987年又出版了第二集,今年3月即将推出第三集。这是向国内读者介绍历届参加“荷赛”的获奖和