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An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system with reflection high energy electron diffraction (RHEED) was introduced. The Si epilayers and SiGe strained|layers on three|inch Si (100) substrates were grown in this UHV/CVD system. The substrate temperature during growth was from 550℃ to 780℃. The properties of epilayers were characterized by high|resolution cross|sectional transmission electron microscopy (TEM), double crystal X|ray diffraction (DCXRD), and spreading resistance (SPR). A B|doped SiGe epilayer with uniform resistivity distribution was grown.
The ultrathin vacuum chemical vapor deposition (UHV / CVD) system with reflection high energy electron diffraction (RHEED) was introduced. The Si epilayers and SiGe strained | layers on three | inch Si (100) substrates were grown in this UHV / CVD system. The substrate temperature during growth was from 550 ° C to 780 ° C. The properties of epilayers were characterized by high | resolution cross sectional transmission electron microscopy (TEM), double crystal X | ray diffraction DCXRD), and spreading resistance (SPR). AB | doped SiGe epilayer with uniform resistivity distribution was grown.