基于硅通孔(TSV,Through Silicon Via)技术的3D IC是一种系统级架构的新方法,内部含有多个平面器件层的叠层,并经由穿透硅通孔在垂直方向实现相互连接。采用这种方式可以大幅缩小芯片尺寸,提高芯片的晶体管密度,改善层间电气互联性能,提升芯片运行速度,降低芯片的功耗。在设计阶段导入3D IC 3D ICs based on Through Silicon Via (TSV) technology are a new approach to system-level architectures that contain multiple layers of planar device layers stacked on top of each other and are interconnected vertically through TSVs. In this way, the chip size can be drastically reduced, the transistor density of the chip can be increased, the inter-layer electrical interconnection performance can be improved, the operation speed of the chip can be increased, and the power consumption of the chip can be reduced. Import 3D IC at design stage