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  5. Near Infrared Electoluminescence of Er—doped ZnS Thin Film Devices

Near Infrared Electoluminescence of Er—doped ZnS Thin Film Devices

来源 :半导体光子学与技术：英文版 | 被引量 : 0次 | 上传用户：Lv619
【摘 要】
：
Near infrared electroluminescence characteristics of the Er-doped ZnS thin film devices,fabricated by thermal evaporation with two doats,are reported.The study
【作 者】
：
WANGYujiang LIUZhaohong 
【机 构】
：
Dept.ofPhysics
【出 处】
：
半导体光子学与技术：英文版
【发表日期】
：
1998年4期
【关键词】
：
微细构造 近红外电致发光 硫化锌薄膜 
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Near infrared electroluminescence characteristics of the Er-doped ZnS thin film devices,fabricated by thermal evaporation with two doats,are reported.The study of the film microstructure has been carried out using X-ray diffraction.The effects of the E-rd
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