Electroluminescence peaking at 1.3 \mum is observed from high concentration boron-diffused silicon p -n junctions. This emission is efficient at low temperature with a quantum efficiency 40 times higher than that of the band-to-band emission around 1.1
We propose and experimentally demonstrate a photonic approach to estimate the time-difference-of-arrival (TDOA) and the angle-of-arrival (AOA) of a microwave signal. TDOA and AOA are estimated from the carrier power difference of the two outputs of the Ma