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近几年来,人们研究了离子注入层中注入杂质在退火过程中的再分布。结果表明,广泛的离子品种,例如Pb~+、As~+、Sb~+、Cs~+、Pt~+、Bi~+、Xe~+、Ni~+、Br~+和Cr~+等高剂量(≥10~(15)atoms/cm~2)注入Si后,在退火时注入的杂质显著地向表面扩散;高剂量离子注入某些金属,退火时也有向表面扩散的现象。因此,高剂量注入的杂质在退火过程中向表面扩散是一个较普遍的现象。
In recent years, the redistribution of impurities implanted in the ion implantation layer during annealing has been studied. The results showed that a wide range of ionic species such as Pb ~ +, As ~ +, Sb ~ +, Cs ~ +, Pt ~ +, Bi ~ +, Xe ~ +, Ni ~ +, Br ~ + and Cr ~ The dose (≥10 ~ (15) atoms / cm ~ 2) implanted Si, the impurities injected during annealing significantly spread to the surface; high dose ion implantation of certain metals, there is also the phenomenon of surface diffusion to the annealing. Therefore, it is a common phenomenon that high-dose implanted impurities diffuse to the surface during annealing.