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本文用蒸发的方法在AlSb薄膜上蒸镀一层Te膜,再经过退火处理使Te扩散进入AlSb实现掺杂.对薄膜的结构、电学及电子学性质进行了表征.结果表明,AlSb:Te薄膜在退火后,出现了Al_xTe_y化合物.AlSb:Te薄膜在150℃～170℃之间表现出反常的电导率温度行为,且A1Sb:Te薄膜在这一温度区间退火后呈现n型导电类型,而在更低或更高温度退火则为P型导电类型,这样的实验结果尚未见他人报道.
In this paper, a layer of Te film was deposited on the AlSb thin film by evaporation and then annealed to diffuse Te into the AlSb for doping.The structure, electrical and electronic properties of the film were characterized.The results show that the AlSb: Te thin film After annealing, Al_xTe_y compounds appeared.AlSb: Te films showed abnormal conductivity temperature behavior between 150 ℃ ~ 170 ℃, and the AlSb: Te films showed n-type conductivity after annealed in this temperature range, Lower or higher temperature annealing is P-type conductivity, the results of such experiments have not been reported by others.