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Resistive Switching Behavior of Ag/Mg0.2Zn0.8O/ZnMn2O4/p+-Si Heterostructure Devices for Nonvolatile
【机 构】
：
School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 5410
【出 处】
：
武汉理工大学学报（材料科学版）（英文版）
【发表日期】
：
2017年1期
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