论文部分内容阅读
本文针对十字形CMOS霍尔器件提出了一种精确的行为性仿真模型。该模型由一个90。旋转对称的无源网络构成,包含4个电流控制的霍尔电压源,12个非线性电阻和8个寄生电容。该行为性模型完全考虑了霍尔器件的各种重要物理效应以及寄生电容和接触电阻的影响,使用Verilog_A语言进行描述,非常适合在Cadence Spectre环境下进行霍尔器件和电路全集成的仿真。使用AMS 0.8μm CMOS工艺参数对该模型做了电路仿真,仿真结果与实验结果达到了很好的一致性,显示出该模型具有极高的仿真精度同时又无需复杂的计算量。
In this paper, an accurate behavioral simulation model is proposed for the cross-shaped CMOS Hall device. The model consists of a 90. Rotating symmetrical passive network consists of 4 current controlled Hall voltage sources, 12 non-linear resistors and 8 parasitic capacitances. The behavioral model, which takes into account various important physical effects of Hall devices as well as the effects of parasitic capacitance and contact resistance and described in the Verilog_A language, is ideal for fully integrated Hall device and circuit simulation in Cadence Specter environments. AMS 0.8μm CMOS process parameters were used to simulate the model. The simulation results are in good agreement with the experimental results. It shows that the model has very high simulation accuracy without complicated calculation.