论文部分内容阅读
A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0.18 μm complementary metal-oxide semiconductor process technology.It shows steady switching characteristics in the dc current-voltage measurement.The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50 ns is also obtained.These results show the feasibility of integrating phase change memory cell with MOSFET.