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针对半导体激光器线阵,建立了二维的热传导模型,模拟计算得到了半导体激光器线阵的二维瞬态温度分布。分析表明器件温度随时间的变化过程可分为三个阶段:在加电后几十微秒的时间内,发光单元之间未出现热交叠,不同填充比的线阵器件的温度基本一致;在几十微秒到几十或几百毫秒之间,大填充比结构线阵的发光单元之间先发生了热交叠,温度上升较快;微通道制冷的器件在几十毫秒之后温度达到稳定,平板热传导热沉封装的器件在几百毫秒之后温度才达到稳定。热传导热沉封装时,在相同的注入电流密度下,高填充比器件的发光单元之间出现温差更快。
For the laser diode array, a two-dimensional heat conduction model is established and the two-dimensional transient temperature distribution of the laser diode array is simulated. The analysis shows that the process of device temperature changes with time can be divided into three stages: within tens of microseconds after power-on, no thermal overlap occurs between the light-emitting units, and the temperature of the line-array devices with different filling ratios is basically the same; Between tens of microseconds to tens or hundreds of milliseconds, a large fill-up ratio occurs between the light-emitting units of the linear array first, and the temperature rises rapidly; and the temperature of the microchannel-cooled device reaches tens of milliseconds later Devices that are stable, flat-panel heat-conducting heat sinks are stable at temperatures of a few hundred milliseconds. In thermally conductive heat sink packages, the temperature difference between the light-emitting units of the highly-filled devices is faster at the same injection current density.