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介绍了一种新型沟道非均匀掺杂的双栅无结金属氧化物半导体场效应晶体管(MOSFET)。采用Sentaurus TCAD仿真软件对不同沟道掺杂浓度(NSC)的沟道非均匀掺杂双栅无结MOSFET和传统双栅无结MOSFET进行了电特性与单粒子辐射效应对比研究,并分析了不同源端沟道掺杂与源端沟道长度(LSC)下新型双栅无结MOSFET的单粒子辐射特性。仿真结果表明,新型双栅无结MOSFET的电学特性与传统双栅无结MOSFET相差不大,但在抗单粒子辐射方面具有优良的性能,在受到单粒子辐射时,可有效降低沟道内电子-空穴对的产生概率,漏极电流与收集电荷都低于传统无结器件,同时还可以降低寄生三极管效应对器件的影响。
A novel double-gate metal oxide semiconductor field effect transistor (MOSFET) with non-uniform channel doping is introduced. Sentaurus TCAD simulation software was used to study the electrical characteristics and single-particle radiation effects of channel heterogeneously doped double-gate non-junction MOSFET and double-gate non-junction MOSFET with different channel doping concentration (NSC) SINGLE PARTICLE RADIATION CHARACTERISTICS OF A NOVEL DOUBLE GATE NO JUNCTION MOSFET WITH SOURCE DOPING AND SOURCE TOC LENGTH (LSC). The simulation results show that the electrical characteristics of the new double-gate junctionless MOSFET are similar to those of the conventional double-gate junctionless MOSFET but have excellent performance in the prevention of single-particle radiation. When subjected to single-particle radiation, the electrical characteristics of the new double- The probability of hole pair generation, the drain current and the collected charge are both lower than that of a traditional junctionless device, and meanwhile, the influence of the parasitic triode effect on the device can also be reduced.