美国原子能委员会70年发表了一篇关于压电场效应应变片的研究报告。它们已制成了一种实验性器件,这种器件是在一种磨光的PZT-4型陶瓷基片上,沉积一层厚度为200(?)的半导体碲膜,器件的应变系数高于3700。由于半导体的不稳定性,因此,这种器件日前还仅用于动态应变测量方面。 70 years the United States Atomic Energy Commission published a study on the piezoelectric field effect strain gage. They have made an experimental device, the device is on a polished PZT-4 type ceramic substrate, the deposition of a thickness of 200 (?) Semiconductor tellurium film, the device has a strain factor greater than 3700 . Due to the instability of the semiconductor, therefore, this device has only been used for dynamic strain measurement.