【摘 要】
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We present the magnetoresistance measurements of ultrathin Mn,5Ge,3 films with different thickness at low temperatures. Owing to the lattice mismatch between Mn
【机 构】
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State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Inst
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We present the magnetoresistance measurements of ultrathin Mn,5Ge,3 films with different thickness at low temperatures. Owing to the lattice mismatch between Mn,5Ge,3 and Ge (111), the thickness of Mn,5Ge,3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers (MLs), the magnetoresistance of the Mn,5Ge,3 films appears a peak at about 6kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn,5Ge,3 film is a potential material for spin injection.
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