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对新型复合沟道AlxGa1-xN/AlyGa1-yN/GaN高电子迁移率晶体管(HEMT)进行了优化设计.从半导体能带理论与量子阱理论出发,自洽求解了器件层结构参数对器件导带能级以及二维电子气(2DEG)中载流子浓度和横向电场的影响.用TCAD软件仿真得到了器件的层结构参数对器件性能的影响.结合理论分析和仿真结果确定了器件的最佳外延层结构Al0.31Ga0.69N/Al0.04Ga0.96N/GaNHEMT.对栅长1μm,栅宽100μm的器件仿真表明,器件的最大跨导为300mS/mm,且在栅极电压-2—1V的宽范围内跨导变化很小,表明器件具有较好的线性度;器件的最大电流密度为1300mA/mm,特征频率为11.5GHz,最大振荡频率为32.5GHz.
The new composite channel AlxGa1-xN / AlyGa1-yN / GaN high electron mobility transistor (HEMT) is optimized.From the theory of semiconductor band and quantum well, the structure parameters of the device layer, The energy level and the influence of carrier concentration and transverse electric field in two-dimensional electron gas (2DEG) were investigated.The influence of layer structure parameters of the device on the performance of the device was simulated by TCAD software.The theoretical analysis and simulation results confirmed the best device performance Epitaxial layer structure Al0.31Ga0.69N / Al0.04Ga0.96N / GaNHEMT. The device simulation of gate length 1μm and gate width 100μm shows that the maximum transconductance of the device is 300mS / mm, and the gate voltage of -2-1V The transconductance within a wide range is small, indicating that the device has good linearity. The maximum current density of the device is 1300mA / mm, the characteristic frequency is 11.5GHz and the maximum oscillation frequency is 32.5GHz.