论文部分内容阅读
EPC公司一直专注于功率管理应用领域,生产增强型硅基氮化镓功率场效应晶体管,近期公司发布了一款增强型单片氮化镓晶体管半桥,型号EPC2106。据称,通过将两个加强型氮化镓功率场效应晶体管集成为一个器件,互联电感和PCB需要的间隙空间都可以消除。而效率(尤其在高频条件下)和功率密度都得到的提升,同时也降低了提供给最终用户功率转换系统的装配成本。EPC2106半桥器件额定电压100V,典型导通电阻55mΩ,输出电容小于600pF,反向恢复(QRR)为0,最大脉冲漏电流为18A。氮化镓较低的导通电阻
EPC has been focused on power management applications to produce enhanced Gallium Nitride Power Field Effect Transistors. Recently, the company released an enhanced single-chip GaN transistor half-bridge, model number EPC2106. Allegedly, by the two enhanced GaN power FET integrated into a device, interconnect inductance and PCB clearance space can be eliminated. Efficiency gains (especially at high frequencies) and power densities have been boosted, while also reducing the cost of assembly available to end-user power conversion systems. EPC2106 half-bridge device rated voltage of 100V, the typical on-resistance of 55mΩ, the output capacitance of less than 600pF, reverse recovery (QRR) is 0, the maximum pulse leakage current of 18A. GaN low on-resistance