通过利用低压金属有机物化学气相沉积技术,在不同偏向角的GaAs衬底上生长了GaAsP/GaInP量子阱外延层结构。通过对样品室温光致发光测试结果的分析,讨论了势垒层生长温度、势阱层Ⅴ/Ⅲ比以及衬底偏向角对外延片发光波长、发光强度及半峰全宽的影响。发现在相同生长条件下,势垒层低温生长的量子阱发光更强;降低势阱层Ⅴ/Ⅲ比可以增加样品的发光强度,同时发光的峰值波长会出现红移。相同生长条件下,样品的发光强度会随其衬底偏向角的增加而增强,半峰全宽随其衬底偏向角的增大而减小。 GaAsP / GaInP quantum well epitaxial layer structures were grown on GaAs substrates with different orientation angles by using low-pressure metal-organic chemical vapor deposition technology. The effects of the growth temperature of the barrier layer, V / Ⅲ ratio of the well layer and the deflection angle of the substrate on the luminescence wavelength, luminescence intensity and full width at half maximum of the epitaxial wafer were analyzed by analyzing the results of photoluminescence at room temperature. It was found that under the same growth conditions, the quantum wells grown by the low temperature of the barrier layer emit more light. Reducing the V / Ⅲ ratio of the well layer can increase the luminescence intensity of the sample, and the peak wavelength of the light emission will be red-shifted. Under the same growth conditions, the luminescence intensity of the sample increases with the increase of the substrate deflection angle, and the full width at half maximum decreases with the deflection angle of the substrate.