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研究了焊盘材料界面耦合作用对Cu(Ni)/Sn-3.0Ag-0.5Cu/Cu(Ni)BGA(Ball Grid Array)结构焊点焊后态和125℃等温时效过程中界面金属间化合物(IMC)的成分、形貌和生长动力学的影响.结果表明.凸点下金属层(UBM)Ni界面IMC的成分与钎料中Cu含量有关,钎料中Cu含量较高时界面IMC为(Cu.Ni)6Sn5.而Cu含量较低时,则生成(Cu,Ni)_3Sn_4;Cu-Ni耦合易导致Cu/Sn-3.0Ag 0.5Cu/Ni焊点中钎料/Ni界面IMC异常生长并产生剥离而进入钎料.125℃等温时效过程中.Sn-3.0Ag-0.5Cu/Cu界面IMC的生长速率常数随钎料中Cu含量增加而提高.Cu Cu耦合降低一次回流侧IMC生长速率常数;Cu Ni耦合和Ni-Ni耦合均导致焊点一次回流Ni侧界面IMC的生长速率常数增大,但Ni对界面IMC生长动力学的影响大于Cu;Ni有利于抑制Cu界面Cu_3Sn生长.降低界面IMC生长速率,但Cu-Ni耦合对Cu界面Cu_3Sn中Kirkendall空洞率无明显影响
The interfacial interfacial interaction between the interfacial intermetallic compounds (Cu) and Cu (Ni) / Sn-3.0Ag-0.5Cu / Cu (Ni) BGA (Ball Grid Array) (IMC) were studied.The results showed that the composition of IMC in the UBM layer was related to the Cu content in the solder, and the IMC in the solder was higher when the content of Cu in the solder was higher (Cu, Ni) _3Sn_4 is formed when the Cu content is low, and the Cu-Ni coupling easily leads to the abnormal growth of the IMC at the solder / Ni interface in the Cu / Sn-3.0Ag 0.5Cu / Ni solder joint The results showed that the growth rate constant of IMC at Sn-3.0Ag-0.5Cu / Cu interface increased with the increase of Cu content in solder at the temperature of 125 ℃ during isothermal aging.Cu Cu coupling decreased the IMC growth rate constant ; Cu Ni coupling and Ni-Ni coupling lead to a large increase of the IMC growth rate constant at the interface of the solder joint, but the effect of Ni on the growth kinetics of the IMC is greater than that of Cu; Ni is beneficial to inhibit the growth of Cu 3 Sn at Cu interface, IMC growth rate, but the Cu-Ni coupling has no significant effect on the Kirkendall void ratio in the Cu interface Cu_3Sn