Diffusion Growth Model of Doping—impurity Longitudinal Profile in Grown Material by MOCVD and Chlori

来源 :半导体光子学与技术：英文版 | 被引量 : 0次 | 上传用户：ivy1128

【摘要】

：

The program process of the longitudinal impurity profile introduced in the quantum well(QW)laser and microwave electronic materials in analysed,based on the gro

【作者】

：

LIUBaojun

【机构】

：

TianjinNormalUniversity

【出处】

：

半导体光子学与技术：英文版

【发表日期】

：

1998年3期

【关键词】

：

化学气相沉积漂流扩散杂质分布图分散生长模型量子阱半导体

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The program process of the longitudinal impurity profile introduced in the quantum well(QW)laser and microwave electronic materials in analysed,based on the growth system by metalorganic chemical vapor deposition(MOCVD)and microwave electronic materials a

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Diffusion Growth Model of Doping—impurity Longitudinal Profile in Grown Material by MOCVD and Chlori

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