Investigation of the guided-mode characteristics of hollow-core photonic band-gap fibre with interst

来源 :Chinese Physics B | 被引量 : 0次 | 上传用户:ReganCai
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
This paper investigates the guided-mode characteristics of hollow-core photonic band-gap fibre (HC-PBGF) with interstitial holes fabricated by an improved twice stack-and-draw technique at visible wavelengths. Based on the simulation model with interstitial holes, the influence of glass interstitial apexes on photonic band-gaps is discussed. The existing forms of guided-mode in part band gaps are shown by using the full-vector plane-wave method. In the experiment, the observed transmission spectrum corresponds to the part band gaps obtained by simulation. The fundamental and second-order guided-modes with mixture of yellow and green light are observed through choosing appropriate fibre length and adjusting coupling device. The loss mechanism of guided-modes in HC-PBGF is also discussed. Based on the simulation model with interstitial holes, the influence of glass interstitial apexes on photonic band-gaps is discussed. The existing forms of guided-mode in part band gaps are shown by using the full-vector plane-wave method. In the experiment, the observed transmission spectrum corresponds to the part band gaps obtained by simulation. The fundamental and second-order guided-modes with mixture of yellow and green light are observed through selecting appropriate fiber length and adjusting coupling device. The loss mechanism of guided-modes in HC-PBGF is also discussed.
其他文献
An enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMTs) was fabricated with 15-nm AlGaN barrier layer.E-mode operation was achieved by
电路系统的集成化程度提高,电路系统故障对系统的运行的影响也增强。模拟电路故障的诊断与排除研究的发展也备受关注,本文将针对主要的几种故障原因,提出一些诊断方法。 The
The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that
2010年12月20日,EZAir在北京发布了一系列基于由业内领先的超宽带(UWB)芯片组解决方案提供商——以色列Wisair公司提供技术支持的创新性产品:EZVIEW(笔记本电脑/高清电视无线
In this paper,we have studied hot carrier injection(HCI) under alternant stress.Under different stress modes,different degradations are obtained from the experi
The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN high electron mobility transistors.The direct current (DC
Name of Project:LY/T 1646—2005 Code of Forest Harvesting Main Participant Units:Department of Forest Resources Management of State Forestry Administration(SFA)
Electromagnetic(EM) scattering from a stack of two rough interfaces separating a homogeneous medium with a perfectly electric conducting(PEC) object has been ca
The efficiency of organic light-emitting devices (OLEDs) based on N,N’-bis(1-naphthyl)-N,N’-diphenyl-N,1’- biphenyl-4,4’-diamine (NPB) (the hole transport l
Ni Schottky contacts on AlGaN/GaN heterostructures have been fabricated. The samples are then thermally treated in a furnace with N 2 ambient at 600 C for diffe